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Determination of Energy Band Gap In Semiconductor Diode

Determination of Energy Band Gap In Semiconductor Diode

Product Supply Code: NLAB-ELECTRONICSAB420008

Product Name: Determination of Energy Band Gap In Semiconductor Diode

Tender Supply Category: Analog Electronics Trainers

Description and Specification of Determination of Energy Band Gap In Semiconductor Diode for Lab Tenders
Determination of Energy Band Gap In Semiconductor Diode Manufacturers and Suppliers India

Experimental Training Board has been designed specifically for Determination of Energy Band Gap in Semiconductor (P-N Junction Diode) using Temperature dependent of reverse saturation current. The board is absolutely self contained and requires no other apparatus.
Practical experience on this board carries great educative value for Science and Engineering Students.

Object:
01. To draw the characteristics of a P-N junction Diode for reverse saturation current and temperature.
02. To determine the Energy Band Gap in a P-N Junction Diode.

Features:
The board consists of the following built-in parts :
01. 2V D.C. at 10mA, regulated Power Supply.
02. Digital Microammeter, 3½ digits having range 200mA D.C.
03. Semiconductor Diode.
04. Thermometer 0-110 °C.
05. Oven, Electrically heated to heat the Semiconductor Diode.
06. Mains ON/OFF switch and Fuse.
The unit is operative on 230V ±10% at 50Hz A.C. Mains.
Adequate no. of patch cords stackable from rear both ends 4mm spring loaded plug length ½ metre.

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